ELECTROLUMINESCENCE FROM ZNSE-ZNTE HETEROJUNCTION DIODES

被引：20

作者：

TSUJIMOTO, Y

FUKAI, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 08期

关键词：

D O I：

10.1143/JJAP.6.1024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1024 / +

页数：1

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[1] EFFICIENT VISIBLE INJECTION ELECTROLUMINESCENCE FROM P-N JUNCTIONS IN ZNSEXTE1-X1 (SINGLE CRYSTALS QUANTUM EFFICIENCY 18PERCENT AT 70DEGREESK E)
AVEN, M
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[2] KOT MV, 1965, FIZ TVERD TELA+, V7, P1001
[3] MIRONOV IA, 1965, SOV PHYS-SOLID STATE, V6, P1779
[4] EFFICIENT VISIBLE ELECTROLUMINESCENCE FROM P-N JUNCTIONS IN ZNXCD1-XTE ( 4PER CENT QUANTUM EFFICIENCY ) EXTERNAL ) IN ZN0.4CD0.6TE AT 7060DEGREES A + 77DEGREES K E )
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[J]. APPLIED PHYSICS LETTERS, 1964, 5 (03) : 53 - &
[5] NGE-PGAAS HETEROJUNCTIONS
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[6] SURFACE PROPERTIES OF 2-6 COMPOUNDS
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[7] EPITAXIAL GROWTH OF ZNTE ON ZNSE BY VAPOR TRANSPORT
TSUJIMOTO, Y
FUKAI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (08) : 1013 - +
[8] VISIBLE ELECTROLUMINESCENCE FORM P-N JUNCTIONS IN CD1-X-MGX-TE
YAMAMOTO, R
INOUE, M
ITOH, K
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 537 - &