共 22 条
[1]
WORK FUNCTION, PHOTOELECTRIC THRESHOLD, AND SURFACE STATES OF ATOMICALLY CLEAN SILICON
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PHYSICAL REVIEW,
1962, 127 (01)
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FUNDAMENTAL REFLECTIVITY AND BAND STRUCTURE OFZNTE,CDTE, AND HGTE
[J].
PHYSICAL REVIEW,
1963, 131 (01)
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[7]
REFLECTIVITY PHOTOELECTRIC EMISSION AND WORK FUNCTION OF ALSB
[J].
PHYSICAL REVIEW,
1965, 139 (4A)
:1228-&
[9]
PHOTOELECTRIC PROPERTIES OF CLEAVED GAAS GASB INAS AND INSB SURFACES - COMPARISON WITH SI AND GE
[J].
PHYSICAL REVIEW,
1965, 137 (1A)
:A245-&
[10]
DIRECT AND INDIRECT EXCITATION PROCESSES IN PHOTOELECTRIC EMISSION FROM SILICON
[J].
PHYSICAL REVIEW,
1962, 127 (01)
:141-&