MICROCAVITY GAALAS/GAAS SURFACE-EMITTING LASER WITH ITH=6MA

[1] A TRIAL FABRICATION OF CIRCULAR BURIED HETEROSTRUCTURE (CBH) GAALAS/GAAS SURFACE EMITTING LASER BY USING SELECTIVE MELTBACK METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (08): : 1264 - 1265

[2] KINOSHITA S, 1986, 6TH P C LAS EL SAN F, P282

[3] KINOSHITA S, 1986, 10TH P IEEE INT SEM, P106

[4] SELECTIVE MELTBACKED SUBSTRATE INNER-STRIPE ALGAAS/GAAS LASERS OPERATED UNDER ROOM-TEMPERATURE CW CONDITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L473 - L475

[5] GAINASP INP SURFACE EMITTING INJECTION-LASER WITH A RING ELECTRODE [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (10) : 1117 - 1118

[1] A TRIAL FABRICATION OF CIRCULAR BURIED HETEROSTRUCTURE (CBH) GAALAS/GAAS SURFACE EMITTING LASER BY USING SELECTIVE MELTBACK METHOD [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (08): : 1264 - 1265

[2] KINOSHITA S, 1986, 6TH P C LAS EL SAN F, P282

[3] KINOSHITA S, 1986, 10TH P IEEE INT SEM, P106

[4] SELECTIVE MELTBACKED SUBSTRATE INNER-STRIPE ALGAAS/GAAS LASERS OPERATED UNDER ROOM-TEMPERATURE CW CONDITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07): : L473 - L475

[5] GAINASP INP SURFACE EMITTING INJECTION-LASER WITH A RING ELECTRODE [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (10) : 1117 - 1118