A TRIAL FABRICATION OF CIRCULAR BURIED HETEROSTRUCTURE (CBH) GAALAS/GAAS SURFACE EMITTING LASER BY USING SELECTIVE MELTBACK METHOD

被引:3
作者
KINOSHITA, S
ODAGAWA, T
IGA, K
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1986年 / 25卷 / 08期
关键词
D O I
10.1143/JJAP.25.1264
中图分类号
O59 [应用物理学];
学科分类号
摘要
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页码:1264 / 1265
页数:2
相关论文
共 4 条
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[2]   ROOM-TEMPERATURE PULSED OSCILLATION OF GAALAS GAAS SURFACE EMITTING INJECTION-LASER [J].
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[3]   SELECTIVE MELTBACKED SUBSTRATE INNER-STRIPE ALGAAS/GAAS LASERS OPERATED UNDER ROOM-TEMPERATURE CW CONDITION [J].
KISHINO, K ;
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TAKO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L473-L475
[4]   GAINASP INP SURFACE EMITTING INJECTION-LASER WITH A RING ELECTRODE [J].
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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (10) :1117-1118