INFLUENCE OF IONIZED IMPURITY SCATTERING ON GUNN EFFECT AND IMPACT IONIZATION IN CDTE

被引：10

作者：

PICUS, GS

DUBOIS, DF

VANATTA, LB

机构：

[1] Hughes Research Laboratories, Malibu

来源：

APPLIED PHYSICS LETTERS | 1968年 / 12卷 / 03期

关键词：

D O I：

10.1063/1.1651908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Recombination radiation from electron-hole pairs generated by impact ionization has been observed in heavily doped CdTe at electric field intensities higher than those required to produce Gunn oscillations in lightly doped material. The suppression of the Gunn effect in the more heavily doped CdTe is attributed to a decrease in the magnitude of the negative differential mobility displayed by the drift velocity vs electric field characteristic resulting from the presence of ionized impurity scattering. © 1968 The American Institute of Physics.

引用

页码：81 / +

页数：1

共 12 条

[1] INTERVALLEY TRANSFER MECHANISM OF NEGATIVE RESISTIVITY IN BULK SEMICONDUCTORS
BUTCHER, PN
FAWCETT, W
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (554P): : 1205 - &
[2] GUNN EFFECT IN POLAR SEMICONDUCTORS
FOYT, AG
MCWHORTER, AL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 79 - +
[3] FOYT AG, 1965, SOLID STATE DEVICE R
[4] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
GUNN, JB
[J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91
[5] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS
GUNN, JB
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (02) : 141 - &
[6] GUNN JB, 1964, S PLASMA EFFECTS SOL
[7] KYLE NR, 1964, OCT AM CER SOC JOINT
[8] MEASUREMENT OF VELOCITY-FIELD CHARACTERISTIC OF GALLIUM ARSENIDE
RUCH, JG
KINO, GS
[J]. APPLIED PHYSICS LETTERS, 1967, 10 (02) : 40 - &
[9] ELECTRICAL PROPERTIES OF N-TYPE CDTE
SEGALL, B
HALSTED, RE
LORENZ, MR
[J]. PHYSICAL REVIEW, 1963, 129 (06): : 2471 - &
[10] SMITH RA, 1961, WAVE MECHANICS CRYST

← 1 2 →