ROOM-TEMPERATURE OBSERVATION OF IMPURITY STATES IN BULK GAAS BY PHOTOREFLECTANCE

被引:19
作者
PIKHTIN, AN [1 ]
AIRAKSINEN, VM [1 ]
LIPSANEN, H [1 ]
TUOMI, T [1 ]
机构
[1] HELSINKI UNIV TECHNOL,PHYS LAB,SF-02150 ESPOO,FINLAND
关键词
D O I
10.1063/1.342781
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2556 / 2557
页数:2
相关论文
共 9 条
[1]  
Aspnes D. E., 1980, HDB SEMICONDUCTORS, V2
[2]   PHOTOREFLECTANCE CHARACTERIZATION OF INTERBAND-TRANSITIONS IN GAAS/ALGAAS MULTIPLE QUANTUM WELLS AND MODULATION-DOPED HETEROJUNCTIONS [J].
GLEMBOCKI, OJ ;
SHANABROOK, BV ;
BOTTKA, N ;
BEARD, WT ;
COMAS, J .
APPLIED PHYSICS LETTERS, 1985, 46 (10) :970-972
[3]  
Huang D., 1987, Proceedings of the SPIE - The International Society for Optical Engineering, V796, P40, DOI 10.1117/12.940994
[4]  
LAHTINEN JA, 1986, ACTA POLYTECH SCAND, V155, P1
[5]   PHOTOREFLECTANCE MODULATION MECHANISMS IN GAAS-ALXGA1-XAS MULTIPLE QUANTUM-WELLS [J].
SHANABROOK, BV ;
GLEMBOCKI, OJ ;
BEARD, WT .
PHYSICAL REVIEW B, 1987, 35 (05) :2540-2543
[6]   PHOTOREFLECTANCE LINE SHAPE AT FUNDAMENTAL EDGE IN ULTRAPURE GAAS [J].
SHAY, JL .
PHYSICAL REVIEW B, 1970, 2 (04) :803-&
[7]   PHOTOREFLECTANCE STUDY OF GAAS/AIAS SUPERLATTICES - FIT TO ELECTROMODULATION THEORY [J].
SHEN, H ;
PARAYANTHAL, P ;
POLLAK, FH ;
TOMKIEWICZ, M ;
DRUMMOND, TJ ;
SCHULMAN, JN .
APPLIED PHYSICS LETTERS, 1986, 48 (10) :653-655
[8]   OBSERVATION OF EXCITON QUENCHING IN GAAS AT ROOM-TEMPERATURE USING ELECTROLYTE ELECTROREFLECTANCE [J].
SILBERSTEIN, RP ;
POLLAK, FH .
SOLID STATE COMMUNICATIONS, 1980, 33 (11) :1131-1133
[9]  
1982, LANDOLTBORNSTEIN N A, V17