ON SATURATED DRIFT VELOCITY OF ELECTRONS IN SI FROM 77 DEGREES K TO 500 DEGREES K

被引：7

作者：

COSTATO, M

REGGIANI, L

机构：

来源：

LETTERE AL NUOVO CIMENTO | 1970年 / 3卷 / 23期

关键词：

D O I：

10.1007/BF02755011

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：728 / +

页数：1

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COSTATO, M ;

SCAVO, S .

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[7] LATTICE-SCATTERING OHMIC MOBILITY OF ELECTRONS IN SILICON [J].

COSTATO, M ;

REGGIANI, L .

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COSTATO, M ;

SCAVO, S .

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[9]

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[10]

COSTATO M, TO BE PUBLISHED