HOT-ELECTRON VARIABLE EFFECTIVE-MASS IN SILICON

被引：6

作者：

COSTATO, M

SCAVO, S

机构：

来源：

NUOVO CIMENTO B | 1968年 / 56卷 / 02期

关键词：

D O I：

10.1007/BF02710162

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：343 / &

共 13 条

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON
BARBER, HD
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (11) : 1039 - &
[2] ELECTRONIC SPECTRA OF CRYSTALLINE GERMANIUM + SILICON
BRUST, D
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A): : 1337 - &
[3] HOT-CARRIER DRIFT VELOCITY IN SILICON
COSTATO, M
SCAVO, S
[J]. NUOVO CIMENTO B, 1967, 52 (01): : 236 - &
[4] HOT-ELECTRON DRIFT MOBILITY IN SILICON BETWEEN 77 DEGREES K AND 300 DEGREES K
COSTATO, M
SCAVO, S
[J]. NUOVO CIMENTO B, 1968, 54 (01): : 169 - &
[5] CYCLOTRON RESONANCE IN UNIAXIALLY STRESSED SILICON .2. NATURE OF COVALENT BOND
HENSEL, JC
HASEGAWA, H
NAKAYAMA, M
[J]. PHYSICAL REVIEW, 1965, 138 (1A): : A225 - &
[6] DETERMINATION OF FREE ELECTRON EFFECTIVE MASS OF N-TYPE SILICON
HOWARTH, LE
GILBERT, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (01) : 236 - &
[7] JORGENSEN MH, 1967, 7 P INT C PHYS SEM, P457
[8] SPECIFIC HEAT OF GERMANIUM AND SILICON AT LOW TEMPERATURES
KEESOM, PH
SEIDEL, G
[J]. PHYSICAL REVIEW, 1959, 113 (01): : 33 - 39
[9] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI
MACFARLANE, GG
MCLEAN, TP
QUARRINGTON, JE
ROBERTS, V
[J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254
[10] Paul W, 1960, HELV PHYS ACTA, V33, P329