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HIGH-QUALITY IN0.15GA0.85AS/ALXGA1-XAS STRAINED MULTI-QUANTUM-WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：6
作者：
BUYDENS, L
DEMEESTER, P
YU, ZQ
VANDAELE, P
机构：
[1] University of Gent-IMEC, Laboratory of Electromagnetism and Acoustics, B-9000, Gent
来源：
JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 07期
关键词：
D O I：
10.1063/1.350971
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated the growth of In0.15Ga0.85As/AlxGa1-xAs strained layer multi quantum wells with the metalorganic vapor phase epitaxy technique. X-ray rocking curves, photoluminescence, and photocurrent measurements clearly demonstrate the influence of the growth temperature on the quality of the deposited layers in this material system. The optimum temperature is found to be at about 650-degrees-C. Photocurrent measurements on diode structures with these strained multi quantum wells as active layer show a clear shift of the exciton absorption peaks due to the quantum confined Stark effect. When the results are compared to the shifts seen for InGaAs/GaAs quantum wells, one observes an enhanced quantum exciton oscillator strength when high transverse electric fields are applied across the multi quantum wells. This property makes the InGaAs/AlGaAs material combination very suitable for use in vertical optical modulators.
引用
收藏
页码：3249 / 3255
页数：7
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