SEPARATION OF E1 AND E1 INTERBAND TRANSITIONS NEAR 2 EV IN GERMANIUM BY THERMOABSORPTION

被引:5
作者
KESSLER, FR
DETTMER, K
机构
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1972年 / 51卷 / 01期
关键词
D O I
10.1002/pssb.2220510105
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:79 / &
相关论文
共 32 条
[1]  
ASPNES DE, 1970, 10 P INT C PHYS SEM, P422
[2]   INFLUENCE OF UNIAXIAL STRESS ON INDIRECT ABSORPTION EDGE IN SILICON AND GERMANIUM [J].
BALSLEV, I .
PHYSICAL REVIEW, 1966, 143 (02) :636-&
[3]  
BATZ B, 1965, SOLID STATE COMMUN, V4, P241
[4]  
BATZ B, 1967, THESIS U LIBRE
[5]   TEMPERATURE-MODULATED OPTICAL ABSORPTION IN SEMICONDUCTORS [J].
BERGLUND, CN .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3019-&
[6]   ELECTROREFLECTANCE AT A SEMICONDUCTOR-ELECTROLYTE INTERFACE [J].
CARDONA, M ;
SHAKLEE, KL ;
POLLAK, FH .
PHYSICAL REVIEW, 1967, 154 (03) :696-+
[7]  
Cardona M., 1969, MODULATION SPECTROSC
[8]  
DETTMER K, 1971, THESIS TECH U BRAUNS
[9]   HIGH-SENSITIVITY PIEZOREFLECTIVITY [J].
ENGELER, WE ;
FRITZSCHE, H ;
GARFINKEL, M ;
TIEMANN, JJ .
PHYSICAL REVIEW LETTERS, 1965, 14 (26) :1069-+
[10]  
FISCHER JE, 1970, 10 P INT C PHYS SEM, P427