RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON

被引：59

作者：

CHERLOW, JM ^{[1
]}

AGGARWAL, RL ^{[1
]}

LAX, B ^{[1
]}

机构：

[1] MIT,PHYS DEPT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.7.4547

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4547 / 4560

页数：14

共 38 条

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[6]

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[7]

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[8]

CHERLOW JM, 1972, 11 P INT C PHYS SEM, P1157

[9] ABSORPTION DUE TO BOUND EXCITONS IN SILICON [J].

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[10] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].

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