ELECTRICAL CHARACTERIZATION OF SURFACE-DEFECTS IN GASB CREATED BY HYDROGEN PLASMA

被引：9

作者：

DUTTA, PS ^{[1
]}

SANGUNNI, KS ^{[1
]}

BHAT, HL ^{[1
]}

KUMAR, V ^{[1
]}

机构：

[1] SOLID STATE PHYS LAB,DELHI 110054,INDIA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 15期

关键词：

D O I：

10.1063/1.113299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using steady state and transient capacitance measurements, the electrical characteristics of a defect layer on the surface of bulk GaSb created during the hydrogen plasma treatment is presented. The trap density, activation energies, and the thickness of the defect layer have been calculated. The trap densities are comparable in magnitude to the carrier concentration. The defects introduce multiple energy levels in the band gap. Typical defect layer thicknesses range from a few angstroms to a fraction of a micron.© 1995 American Institute of Physics.

引用

页码：1986 / 1988

页数：3

共 8 条

[1] REVERSE-BIAS ANNEALING KINETICS OF MG-H COMPLEXES IN INP [J].