GROWTH OF (111) CDTE ON TILTED (001) GAAS

被引：36

作者：

CIBERT, J ^{[1
]}

GOBIL, Y ^{[1
]}

SAMINADAYAR, K ^{[1
]}

TATARENKO, S ^{[1
]}

CHAMI, A ^{[1
]}

FEUILLET, G ^{[1
]}

DANG, LS ^{[1
]}

LIGEON, E ^{[1
]}

机构：

[1] CEN,DEPT RECH FONDAMENTALE,SPH,PSC,F-38041 GRENOBLE,FRANCE

来源：

关键词：

D O I：

10.1063/1.100859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：828 / 830

页数：3

共 15 条

[1] AUVRAY P, IN PRESS J CRYST GRO
[2] STUDY OF EPITAXIAL-GROWTH OF ZNTE ON GAAS(001) BY CHANNELING
CHAMI, AC
LIGEON, E
FONTENILLE, J
FEUILLET, G
DANIELOU, R
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (02) : 637 - 641
[3] DANG LS, UNPUB
[4] DICIOCCIO L, IN PRESS J CRYST GRO
[5] DVORETSKII SA, 1988, I PHYS C SER, V93, P407
[6] FELDMAN LC, 1982, MATERIAL ANAL ION CH, P120
[7] SURFACE-STRUCTURE OF GAAS WITH ADSORBED TE
FELDMAN, RD
AUSTIN, RF
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (15) : 954 - 956
[8] STRUCTURAL DEFECT RELATED DONOR-BOUND EXCITON SPECTRA IN CDTE EPITAXIAL-FILMS
FENG, ZC
BURKE, MG
CHOYKE, WJ
[J]. APPLIED PHYSICS LETTERS, 1988, 53 (02) : 128 - 130
[9] LUMINESCENCE CHARACTERIZATION OF RESIDUAL IMPURITIES IN CDTE GROWN BY MOLECULAR-BEAM EPITAXY
FRANCOU, JM
SAMINADAYAR, K
PAUTRAT, JL
GAILLARD, JP
MILLION, A
FONTAINE, C
[J]. JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 220 - 225
[10] GOBIL Y, IN PRESS SURF SCI