CAPACITANCE VOLTAGE CHARACTERISTICS OF A QUANTUM-WELL WITHIN A SCHOTTKY LAYER

被引：23

作者：

KREHER, K

机构：

[1] Fachbereich Physik, Universität Leipzig

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 135卷 / 02期

关键词：

D O I：

10.1002/pssa.2211350226

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The capacitance-voltage characteristics of a quantum well inside a depletion layer is computed self-consistently by simultaneous integration of Poisson's and Schrodinger's equations. Based on the numerical results a method is developed for the determination of the position of the quantum well and the carrier concentration in it from measured C-V profiles.

引用

页码：597 / 603

页数：7

共 8 条

[1] A CALCULATION OF THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF P+-INP/N-INP/N-INGAASP PHOTO-DIODES [J].