A CALCULATION OF THE CAPACITANCE-VOLTAGE CHARACTERISTICS OF P+-INP/N-INP/N-INGAASP PHOTO-DIODES

被引：4

作者：

DONNELLY, JP

机构：

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 07期

关键词：

D O I：

10.1016/0038-1101(82)90070-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：669 / 677

页数：9

共 15 条

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