DESIGN CONSIDERATIONS FOR CHANNEL-DOPED BACK-GATED HIGH ELECTRON-MOBILITY STRUCTURES

被引：3

作者：

OWEN, PM ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 11期

关键词：

D O I：

10.1063/1.108705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of self-consistent calculations for the electronic subband structure of channel-doped, back-gated GaAs-AlGaAs heterostructures. The calculations identify the important design parameters for this system and illustrate the quantum effects occurring. We show that the doping density in the channel determines the mode of operation of the device and whether resonant effects are important. We discuss the design of velocity modulation transistors and structures with improved transconductance.

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页码：1274 / 1276

页数：3

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