TRANSPORT-PROPERTIES OF CLOSELY SEPARATED 2-DIMENSIONAL ELECTRON GASES IN A CHANNEL-DOPED BACK GATED HIGH ELECTRON-MOBILITY TRANSISTOR

被引：7

作者：

KUROBE, A ^{[1
]}

FROST, JEF ^{[1
]}

RITCHIE, DA ^{[1
]}

JONES, GAC ^{[1
]}

PEPPER, M ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 26期

关键词：

D O I：

10.1063/1.106715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated electron transport in two, closely separated, two-dimensional electron gases in a wide GaAs quantum well controlled both by front and back gates. The electron mobility in the back channel was considerably reduced by impurity doping. Magnetotransport measurements suggest the existence of a low mobility state associated with a high mobility front gas state. The results have a bearing on the proposed velocity modulation transistor, as the existence of two electron channels localized at their respective interfaces, without mutual interaction, can be difficult to achieve.

引用

页码：3268 / 3270

页数：3

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