INVESTIGATION OF PARALLEL CONDUCTION IN GAAS/ALXGA1-XAS MODULATION-DOPED STRUCTURES IN THE QUANTUM LIMIT

被引：34

作者：

REED, MA ^{[1
]}

KIRK, WP ^{[1
]}

KOBIELA, PS ^{[1
]}

机构：

[1] TEXAS A&M UNIV,DEPT PHYS,COLLEGE STN,TX 77843

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1986年 / 22卷 / 09期

关键词：

D O I：

10.1109/JQE.1986.1073155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1753 / 1759

页数：7

共 27 条

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[8]

LAUGHLIN RB, 1981, PHYS REV B, V23, P5632, DOI 10.1103/PhysRevB.23.5632

[9] ANOMALOUS QUANTUM HALL-EFFECT - AN INCOMPRESSIBLE QUANTUM FLUID WITH FRACTIONALLY CHARGED EXCITATIONS [J].

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[10] ANOMALOUS PHOTOMAGNETORESISTANCE EFFECT IN MODULATION-DOPED ALGAAS GAAS HETEROSTRUCTURES [J].

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APPLIED PHYSICS LETTERS, 1984, 45 (02) :164-167

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