QUANTUM HALL-EFFECT AND HOPPING CONDUCTION IN INXGA1-XAS-INP HETEROJUNCTIONS AT LOW-TEMPERATURE

被引：8

作者：

GULDNER, Y ^{[4
]}

HIRTZ, JP

BRIGGS, A

VIEREN, JP

VOOS, M

RAZEGHI, M

机构：

[1] THOMSON CSF, LRC, F-91401 ORSAY, FRANCE

[2] CNRS, CTR RECH TRES BASSE TEMP, F-38042 GRENOBLE, FRANCE

[3] CNRS, SERV NATL CHAMPS INTENSES, F-38042 GRENOBLE, FRANCE

[4] ECOLE NORMALE SUPER, PHYS SOLIDES GRP, F-75231 PARIS 05, FRANCE

[5] THOMSON CSF, CENT RECH LAB, F-91401 ORSAY, FRANCE

来源：

SURFACE SCIENCE | 1984年 / 142卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(84)90303-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：179 / 181

页数：3

共 12 条

[1] LOW-TEMPERATURE INVESTIGATIONS OF THE QUANTUM HALL-EFFECT IN INXGA1-XAS-INP HETEROJUNCTIONS [J].

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[2] HOPPING CONDUCTION IN THE LANDAU-LEVEL TAILS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AT LOW-TEMPERATURES [J].

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[3] MAGNETO-QUANTUMTRANSPORT ON GAAS-ALXGA1-XAS HETEROSTRUCTURES AT VERY LOW-TEMPERATURES [J].

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[4]

GIRVIN SM, 1982, PHYS REV B, V26, P1651, DOI 10.1103/PhysRevB.26.1651

[5] QUANTUM HALL EFFECT IN MODULATION DOPED IN0.53GA0.47AS-INP HETEROJUNCTIONS. [J].

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[6]

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[8] QUANTIZED HALL-EFFECT AT LOW-TEMPERATURES [J].

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GOSSARD, AC .

PHYSICAL REVIEW B, 1982, 25 (08) :5566-5569

[9] RESISTANCE STANDARD USING QUANTIZATION OF THE HALL RESISTANCE OF GAAS-ALXGA1-XAS HETEROSTRUCTURES [J].

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GOSSARD, AC .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :550-552

[10] TWO-DIMENSIONAL MAGNETOTRANSPORT IN THE EXTREME QUANTUM LIMIT [J].

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