RESISTANCE STANDARD USING QUANTIZATION OF THE HALL RESISTANCE OF GAAS-ALXGA1-XAS HETEROSTRUCTURES

被引：185

作者：

TSUI, DC

GOSSARD, AC

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 07期

关键词：

D O I：

10.1063/1.92408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：550 / 552

页数：3

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[7] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE
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[8] OBSERVATION OF 2-DIMENSIONAL ELECTRONS IN LPE-GROWN GAAS-ALXGA1-XAS HETEROJUNCTIONS
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[9] TWO-DIMENSIONAL ELECTRICAL TRANSPORT IN GAAS-ALXGA1-XAS MULTILAYERS AT HIGH MAGNETIC-FIELDS
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[10] TSUI DC, UNPUBLISHED