INVESTIGATION OF THE MECHANISM RESPONSIBLE FOR THE CORROSION-RESISTANCE OF B IMPLANTED COPPER

Ion implantation is an effective way to passivate copper films. The present work was designed to refine our understanding of the mechanisms which lead to this result. The oxidation of B implanted copper and copper oxide (Cu2O) was studied. It was found that the oxidation rate of Cu2O implanted with B is as low as that of copper metal implanted with B. Further, it is observed that CuO forms on the surface of both B implanted Cu and Cu2O, in contrast to the Cu2O that forms on not implanted copper. A mechanism which leads to these effects is briefly discussed.