NEAR-SURFACE ELECTRICAL EFFECTS OF OXIDATION AND HYDROGENATION IN SILICON

被引：7

作者：

DELIDAIS, I

BALLUTAUD, D

BOUTRYFORVEILLE, A

MAURICE, JL

AUCOUTURIER, M

LEROY, B

机构：

[1] CNRS,PHYS SOLIDES LAB,F-92195 MEUDON,FRANCE

[2] CNRS,ELECTR INTERFACIALE,F-92195 MEUDON,FRANCE

[3] IBM CORP,F-91102 CORBEIL ESSONNES,FRANCE

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 4卷 / 1-4期

关键词：

D O I：

10.1016/0921-5107(89)90257-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：277 / 280

页数：4

共 11 条

[1]

AUCOUTURIER M, 1989, SPRINGER P PHYSICS, V35, P64

[2]

CHEVALLIER J, 1988, ANNU REV MATER SCI, V18, P219

[3]

Green M. A., 1987, HIGH EFFICIENCY SILI

[4] SOLUBILITY AND DIFFUSION-COEFFICIENT OF OXYGEN IN SILICON [J].

ITOH, Y ;

NOZAKI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (03) :279-284

[5]

JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166

[6]

Leroy B., UNPUB

[7]

MAURICE JL, 1989, IN PRESS APPL PHYS L

[8]

SARTI D, 1988, COMMUNICATION

[9] CALCULATION OF THE ELECTRON-BEAM-INDUCED CURRENT (EBIC) AT A SCHOTTKY CONTACT AND COMPARISON WITH AU/N-GE DIODES [J].

TABET, N ;

TARENTO, RJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 59 (02) :243-261

[10] INVESTIGATION OF MINORITY-CARRIER DIFFUSION LENGTHS BY ELECTRON-BOMBARDMENT OF SCHOTTKY BARRIERS [J].

WU, CJ ;

WITTRY, DB .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2827-2836

← 1 2 →