CHARACTERIZATION OF MULTIPLE-SCAN ELECTRON-BEAM ANNEALING METHOD

被引：26

作者：

MCMAHON, RA ^{[1
]}

AHMED, H ^{[1
]}

DOBSON, RM ^{[1
]}

SPEIGHT, JD ^{[1
]}

机构：

[1] PO RES CTR,RES CTR,IPSWICH 1P5 7RE,SUFFOLK,ENGLAND

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 08期

关键词：

D O I：

10.1049/el:19800215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：295 / 297

页数：3

相关论文

共 6 条

[1] STUDY OF THE MECHANISM OF CW LASER ANNEALING OF ARSENIC-IMPLANTED SILICON
GAT, A
LIETOILA, A
GIBBONS, JF
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2926 - 2929
[2] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE
GREENWALD, AC
KIRKPATRICK, AR
LITTLE, RG
MINNUCCI, JA
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 783 - 787
[3] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON
MCMAHON, RA
AHMED, H
[J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47
[4] MCMAHON RA, 156TH M EL SOC LOS A
[5] MILLER, 1978, SEMICONDUCTOR CHARAC
[6] ELECTROCHEMICAL CARRIER CONCENTRATION PROFILING IN SILICON
SHARPE, CD
LILLEY, P
ELLIOTT, CR
AMBRIDGE, T
[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 622 - 624