OBSERVATION OF MINIBAND TRANSPORT IN GAAS/AL0.33GA0.67AS SUPERLATTICES

被引：27

作者：

HUTCHINSON, HJ

HIGGS, AW

HERBERT, DC

SMITH, GW

机构：

[1] Defence Research Agency, Worcestershire WR14 3PS, St. Andrews Road

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.355852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The low temperature current-voltage characteristics of a strongly coupled, short-period GaAs/Al0.33Ga0.67As superlattice structure have been studied with applied magnetic fields both parallel and perpendicular to the current flow. The complex dependence of the current-voltage characteristics on magnetic field perpendicular to the current flow is consistent with a simple model based on Bloch transport via the lowest miniband. From fits to the data the scattering time and mobility have been estimated as 0.15 ps and 4100 cm(2)/V s, respectively. Further evidence of negative-differential velocity associated with miniband transport comes from the observation of an extended negative-differential resistance region at room temperature in a structure with 50 superlattice repeats.

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页码：320 / 324

页数：5

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