ASPECTS OF HREM OF TETRAHEDRAL SEMICONDUCTORS

被引：18

作者：

GLAISHER, RW

SPARGO, AEC

机构：

[1] Univ of Melbourne, Sch of Physics,, Parkville, Aust, Univ of Melbourne, Sch of Physics, Parkville, Aust

来源：

ULTRAMICROSCOPY | 1985年 / 18卷 / 1-4期

关键词：

COMPUTER SIMULATION - CRYSTALS - Atomic Structure - IMAGE PROCESSING - MICROSCOPES; ELECTRON - SEMICONDUCTING SILICON;

D O I：

10.1016/0304-3991(85)90150-0

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

This paper reports on two aspects of electron-optical behavior of tetrahedral semiconductors established during a computer-simulation investigation of a wide range of these materials covering the diamond, sphaelerite and wurtzite structures. The scattering behavior of the diamond-structure elements, diamond (C), silicon (Si) and germanium (Ge) is found to be similar when comparison is made at the appropriate accelerating voltage.

引用

页码：323 / 334

页数：12

共 15 条

[1] BOURRET A, 1982, PHILOS MAG A, V45, P1, DOI 10.1080/01418618208243899
[2] MULTI-BEAM LATTICE IMAGES FROM GERMANIUM ORIENTED IN (011)
DESSEAUX, J
RENAULT, A
BOURRET, A
[J]. PHILOSOPHICAL MAGAZINE, 1977, 35 (02): : 357 - 372
[3] GLAISHER RW, 1985, THESIS U MELBOURNE
[4] GLAISHER RW, 1983, I PHYS C SERIES, V68, P185
[5] DISSOCIATION OF DISLOCATIONS IN GAAS
GOMEZ, AM
HIRSCH, PB
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (06): : 733 - 737
[6] HASHIMOTO H, 1978, CHEM SCRIPTA, V14, P23
[7] IZUI K, 1978, CHEM SCRIPTA, V14, P98
[8] KRIVANEK OL, 1980, 38TH P ANN M EL MICR, P170
[9] DISTINGUISHING DISSOCIATED GLIDE AND SHUFFLE SET DISLOCATIONS BY HIGH-RESOLUTION ELECTRON-MICROSCOPY
OLSEN, A
SPENCE, JCH
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (04): : 945 - 965
[10] SELF PG, UNPUB

← 1 2 →