ASPECTS OF HREM OF TETRAHEDRAL SEMICONDUCTORS

被引：18

作者：

GLAISHER, RW

SPARGO, AEC

机构：

[1] Univ of Melbourne, Sch of Physics,, Parkville, Aust, Univ of Melbourne, Sch of Physics, Parkville, Aust

来源：

ULTRAMICROSCOPY | 1985年 / 18卷 / 1-4期

关键词：

COMPUTER SIMULATION - CRYSTALS - Atomic Structure - IMAGE PROCESSING - MICROSCOPES; ELECTRON - SEMICONDUCTING SILICON;

D O I：

10.1016/0304-3991(85)90150-0

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

This paper reports on two aspects of electron-optical behavior of tetrahedral semiconductors established during a computer-simulation investigation of a wide range of these materials covering the diamond, sphaelerite and wurtzite structures. The scattering behavior of the diamond-structure elements, diamond (C), silicon (Si) and germanium (Ge) is found to be similar when comparison is made at the appropriate accelerating voltage.

引用

页码：323 / 334

页数：12

共 15 条

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