HETEROEPITAXIAL GROWTH OF INSB ON (100)GAAS USING MOLECULAR-BEAM EPITAXY

被引：59

作者：

WILLIAMS, GM

WHITEHOUSE, CR

MCCONVILLE, CF

CULLIS, AG

ASHLEY, T

COURTNEY, SJ

ELLIOTT, CT

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 13期

关键词：

D O I：

10.1063/1.100405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1189 / 1191

页数：3

共 16 条

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[6]

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[8] PROPERTIES OF MBE GROWN INSB AND INSB1-XBIX [J].

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[10] STRAINED-LAYER SUPERLATTICES - A BRIEF REVIEW [J].

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