ELECTRICAL-PROPERTIES OF LIQUID-PHASE EPITAXIAL INP GROWN FROM TIN SOLUTION

被引:6
作者
NEUMANN, H
JACOBS, B
机构
[1] ARBEITSGEMEINSCHAFT AIIBV HALBLEITER,LEIPZIG,GER DEM REP
[2] KARL MARX UNIV,SEKT CHEM,DDR-701 LEIPZIG,GER DEM REP
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 49卷 / 02期
关键词
D O I
10.1002/pssa.2210490257
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K139 / K144
页数:6
相关论文
共 20 条
  • [1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH
    ASTLES, MG
    SMITH, FGH
    WILLIAMS, EW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1750 - 1757
  • [2] BACHMANN KJ, 1975, J ELECTRON MATER, V4, P471
  • [3] BACHMANN KJ, 1975, I PHYS C SER, V24, P121
  • [4] EFFECTIVE DISTRIBUTION COEFFICIENTS OF SOME GROUP-VI ELEMENTS IN INDIUM-PHOSPHIDE GROWN BY LIQUID-PHASE EPITAXY
    BROWN, KE
    [J]. SOLID-STATE ELECTRONICS, 1974, 17 (05) : 505 - 507
  • [5] ON MECHANISM OF ELECTRON SCATTERING IN INP
    GALAVANO.VV
    SIUKAEV, NV
    [J]. PHYSICA STATUS SOLIDI, 1970, 38 (02): : 523 - &
  • [6] LPE-GROWTH OF INP ON GAAS
    JACOBS, B
    BUTTER, E
    DOBNER, B
    [J]. KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (04): : 383 - 387
  • [7] Kesamanly F. P., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1463
  • [8] EFFECT OF GROWTH-RATE AND TEMPERATURE ON INCORPORATION OF SN IN GAAS DURING LPE
    KONIG, U
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (09) : 1414 - 1420
  • [9] NAG BR, 1978, J PHYS C SOLID STATE, V11, P119, DOI 10.1088/0022-3719/11/1/022
  • [10] BAND-STRUCTURE AND ELECTRONIC PROPERTIES OF INP
    NEUMANN, H
    HESS, E
    TOPOL, I
    [J]. CZECHOSLOVAK JOURNAL OF PHYSICS, 1975, B 25 (02) : 174 - 183