MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE

被引:129
作者
FREEOUF, JL
RUBLOFF, GW
HO, PS
KUAN, TS
机构
[1] IBM Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1103/PhysRevLett.43.1836
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Photoemission studies of Pd on clean Si(111) surfaces show that formation of the Pd2Si compound dominates the microscopic chemistry and properties of the Pd-Si interface. No evidence is found for interface dipoles or occupied metal-induced interface states in this system. The Pd2Si reaction product (a metal) has an electronic structure more like that of the noble metals than the transition metals, with an occupied 4d band located 2.75 eV below the Fermi energy. © 1979 The American Physical Society.
引用
收藏
页码:1836 / 1839
页数:4
相关论文
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  • [21] 1978, J VAC SCI TECHNOL, V15