DETERMINATION OF NONLINEAR GAIN COEFFICIENT OF SEMICONDUCTOR-LASERS FROM ABOVE-THRESHOLD SPONTANEOUS EMISSION MEASUREMENT

被引:16
作者
GIRARDIN, F [1 ]
DUAN, GH [1 ]
CHABRAN, C [1 ]
GALLION, P [1 ]
BLEZ, M [1 ]
ALLOVON, M [1 ]
机构
[1] FRANCE TELECOM,CNET PARIS B,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE
关键词
D O I
10.1109/68.313044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The measurement of spontaneous emission power above threshold has shown a nearly linear increase with biasing current in a 1.55-mum InGaAs/InGaAlAs multiple quantum-well laser. Based on this measurement, we propose a novel experimental method to determine the nonlinear gain coefficient. The obtained value is 1.2 x 10(-17) cm3 for the laser used. This value corresponds reasonably to that obtained by chirp-to-modulated-power ratio method, confirming the validity of this new measurement method.
引用
收藏
页码:894 / 896
页数:3
相关论文
共 10 条
[1]  
Agrawal G., 1986, LONG WAVELENGTH SEMI
[3]   CW DEGRADATION AT 300 DEGREES K OF GAAS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS .2. ELECTRONIC GAIN [J].
HAKKI, BW ;
PAOLI, TL .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4113-4119
[4]   INTERVALENCE BAND ABSORPTION-COEFFICIENT MEASUREMENTS IN BULK LAYER, STRAINED AND UNSTRAINED MULTIQUANTUM-WELL 1.55 MU-M SEMICONDUCTOR-LASERS [J].
JOINDOT, I ;
BEYLAT, JL .
ELECTRONICS LETTERS, 1993, 29 (07) :604-606
[5]   LOW-THRESHOLD GRIN-SCH ALGAINAS 1.55-MU-M QUANTUM-WELL BURIED RIDGE STRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KAZMIERSKI, C ;
BLEZ, M ;
QUILLEC, M ;
ALLOVON, M ;
SERMAGE, B .
ELECTRONICS LETTERS, 1990, 26 (13) :889-891
[6]   EFFECT OF NONLINEAR GAIN REDUCTION ON SEMICONDUCTOR-LASER WAVELENGTH CHIRPING [J].
KOCH, TL ;
LINKE, RA .
APPLIED PHYSICS LETTERS, 1986, 48 (10) :613-615
[7]  
LACOURSE J, 1988, 11 INT SEM LAS C, P206
[8]   AUGER RECOMBINATION IN INTRINSIC GAAS [J].
STRAUSS, U ;
RUHLE, WW ;
KOHLER, K .
APPLIED PHYSICS LETTERS, 1993, 62 (01) :55-57
[9]   MEASUREMENT OF NONLINEAR GAIN FROM FM MODULATION INDEX OF INGAASP LASERS [J].
SU, CB ;
LANZISERA, V ;
OLSHANSKY, R .
ELECTRONICS LETTERS, 1985, 21 (20) :893-895
[10]   HIGH-SPEED MODULATION OF SEMICONDUCTOR-LASERS [J].
TUCKER, RS .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) :1180-1192