DETERMINATION OF NONLINEAR GAIN COEFFICIENT OF SEMICONDUCTOR-LASERS FROM ABOVE-THRESHOLD SPONTANEOUS EMISSION MEASUREMENT

被引：16

作者：

GIRARDIN, F ^{[1
]}

DUAN, GH ^{[1
]}

CHABRAN, C ^{[1
]}

GALLION, P ^{[1
]}

BLEZ, M ^{[1
]}

ALLOVON, M ^{[1
]}

机构：

[1] FRANCE TELECOM,CNET PARIS B,LAB BAGNEUX,F-92220 BAGNEUX,FRANCE

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 08期

关键词：

D O I：

10.1109/68.313044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The measurement of spontaneous emission power above threshold has shown a nearly linear increase with biasing current in a 1.55-mum InGaAs/InGaAlAs multiple quantum-well laser. Based on this measurement, we propose a novel experimental method to determine the nonlinear gain coefficient. The obtained value is 1.2 x 10(-17) cm3 for the laser used. This value corresponds reasonably to that obtained by chirp-to-modulated-power ratio method, confirming the validity of this new measurement method.

引用

页码：894 / 896

页数：3

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