EVOLUTION OF SURFACE TEXTURES ON N-INP SAMPLES ETCHED PHOTOELECTROCHEMICALLY

被引:23
作者
FERREIRA, NG
SOLTZ, D
DECKER, F
CESCATO, L
机构
[1] UNIVAP,ICET,BR-12245720 S JOSE CAMPOS,BRAZIL
[2] UNIV ROMA LA SAPIENZA,DIPARTIMENTO CHIM,I-00185 ROME,ITALY
关键词
D O I
10.1149/1.2044176
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The formation and growth of surface textures on (100) n-InP samples etched photoelectrochemically in HCL solution was investigated. This etching produced elongated etch pits, which were analyzed using scanning electron microscopy and angular resolved optical scattering. The evolution of the size and geometry of the microstructures with the etching time is described and discussed. The effect of the surface texture on the sample reflectivity was followed by total integrated scattering and by I-V curve measurements.
引用
收藏
页码:1348 / 1352
页数:5
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