A QUANTITATIVE STUDY OF CHEMICAL ETCHING OF INP

被引:18
作者
DASNEVES, S
DEPAOLI, MA
机构
[1] Instituto de Química, Universidade Estadual de Campinas, 13081-970 Campinas, SP
关键词
D O I
10.1149/1.2220869
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Chemical etching of InP with HCl is used on a large scale, but limited information is available in the literature on the quantitative and mechanistic aspects of this reaction, A higher reaction rate is observed in alcoholic HCl than in aqueous HCl solutions. Also, a decrease of the reaction rate is observed with an increase in the degree of dissociation of HCl in aqueous solutions. We confirm that chemical etching depends on the concentration of nondissociated HCl molecules and that the reaction does not occur below a critical concentration. A first-order rate was obtained in aqueous and in alcoholic HCl solutions. The Arrhenius plot indicated an activation energy greater than 40 kJ . mol-1, indicating a kinetically controlled process. Scanning electron microscopy also showed profiles characteristic of a kinetically controlled process.
引用
收藏
页码:2599 / 2603
页数:5
相关论文
共 16 条
[1]   CHEMICAL ETCHING CHARACTERISTICS OF (001)INP [J].
ADACHI, S ;
KAWAGUCHI, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) :1342-1349
[2]   CHEMICAL ETCHING OF INGAASP/INP DH WAFER [J].
ADACHI, S ;
NOGUCHI, Y ;
KAWAGUCHI, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1053-1062
[3]   CRYSTALLINE STRUCTURE AND SURFACE REACTIVITY [J].
GATOS, HC .
SCIENCE, 1962, 137 (3527) :311-&
[4]   CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].
GATOS, HC ;
LAVINE, MC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433
[5]   MECHANISMS OF DECOMPOSITION OF SEMICONDUCTORS BY ELECTROCHEMICAL OXIDATION AND REDUCTION [J].
GERISCHE.H ;
MINDT, W .
ELECTROCHIMICA ACTA, 1968, 13 (06) :1329-&
[6]   MECHANISM OF GALLIUM ARSENIDE DECOMPOSITION BY OXIDIZING AGENTS [J].
GERISCHER, H ;
WALLEMMA.I .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1969, 64 (1-4) :187-+
[7]  
Kangro W., 1962, Z PHYS CHEM, V32, P273
[8]  
KELLY JJ, 1988, PHILIPS TECH REV, V44, P61
[9]  
Notten P. H. L., 1991, ETCHING 3 4 SEMICOND
[10]   THE ETCHING OF INP IN HCL SOLUTIONS - A CHEMICAL MECHANISM [J].
NOTTEN, PHL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (11) :2641-2644