CONDUCTION IN SPUTTERED HYDROGENATED III-V COMPOUNDS

[1] AUSTIN IG, 1978, P PHYS SEMIC C EDINB, P1155

[2] FREEMAN E, PHYS REV

[3] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[4] FIELD-DEPENDENT CARRIER TRANSPORT IN NON-CRYSTALLINE SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (05): : 1151 - 1168

[5] ELECTRON AND HOLE DRIFT MOBILITY IN AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 762 - 764

[6] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (10) : 969 - 972

[7] PAUL W, 1977, 7TH P INT C AM LIQ S, P467

[8] DOPED AMORPHOUS-SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1977, 26 (06) : 811 - 845

[9] R F SPUTTERED AMORPHOUS SILICON SCHOTTKY-BARRIER SOLAR-CELLS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 625 - 628

[10] THOMPSON MJ, 1979, P INT PHOTOVOLT C BE

[1] AUSTIN IG, 1978, P PHYS SEMIC C EDINB, P1155

[2] FREEMAN E, PHYS REV

[3] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[4] FIELD-DEPENDENT CARRIER TRANSPORT IN NON-CRYSTALLINE SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE, 1973, 27 (05): : 1151 - 1168

[5] ELECTRON AND HOLE DRIFT MOBILITY IN AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 762 - 764

[6] DOPING, SCHOTTKY-BARRIER AND P-N-JUNCTION FORMATION IN AMORPHOUS-GERMANIUM AND SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1976, 20 (10) : 969 - 972

[7] PAUL W, 1977, 7TH P INT C AM LIQ S, P467

[8] DOPED AMORPHOUS-SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1977, 26 (06) : 811 - 845

[9] R F SPUTTERED AMORPHOUS SILICON SCHOTTKY-BARRIER SOLAR-CELLS [J]. REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12): : 625 - 628

[10] THOMPSON MJ, 1979, P INT PHOTOVOLT C BE