STICKING, ADSORPTION, AND ABSORPTION OF ATOMIC-H ON CU(110)

被引:62
作者
BISCHLER, U [1 ]
SANDL, P [1 ]
BERTEL, E [1 ]
BRUNNER, T [1 ]
BRENIG, W [1 ]
机构
[1] TECH UNIV MUNICH,INST THEORET PHYS,W-8046 GARCHING,GERMANY
关键词
D O I
10.1103/PhysRevLett.70.3603
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The sticking coefficient of atomic hydrogen at T(G) = 1815 K on a Cu (110) surface has been determined to be 18%. In addition to the buildup of a chemisorption layer the absorption of atomic H into subsurface sites is observed. The subsurface sites are thermally less stable than the chemisorption sites. Model calculations for the phononic energy transfer and estimates for the parallel momentum transfer as well as for electron-hole pair excitation indicate that the first two mechanisms dominate the accommodation process.
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页码:3603 / 3606
页数:4
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