ION-IMPLANTED X-BAND IMPATT-TRAPATT BACK-TO-BACK DIODES

被引：6

作者：

FONG, TT ^{[1
]}

YING, RS ^{[1
]}

LEE, DH ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CORP,RES LABS,TORRANCE,CA 90509

来源：

关键词：

D O I：

10.1109/PROC.1973.9198

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1044 / 1045

页数：2

共 4 条

[1] A NOVEL TRAPATT OSCILLATOR DESIGN [J].

EVANS, WJ ;

SEIDEL, TE ;

SCHARFET.DL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1294-&

GIBBONS, G ;

GRACE, MI .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (03) :512-&

[3]

SNAPP CP, 1972, IEEE T ELECTRON DEVI, VED19, P172

[4] X-BAND SILICON TRAPATT DIODES [J].

YING, RS ;

KRAMER, NB .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1285-+