CONTRIBUTIONS TO THE SURFACE PREPARATION OF SEMICONDUCTOR-MATERIALS OF LOW HARDNESS

被引:8
作者
ENGEL, A
机构
来源
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1980年 / 15卷 / 12期
关键词
D O I
10.1002/crat.19800151225
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
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页码:1439 / 1446
页数:8
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共 32 条
[1]  
ABDULLAEV GB, 1960, IZVEST AKAD NAUK AZE, V49
[2]  
ADAMS CH, 1927, J WASHINGTON ACAD SC, V17, P527
[3]  
BEBRICK RF, 1960, J CHEM PHYSICS, V32, P1826
[4]  
BETECHTIN AG, 1964, LEHRBUCH SPEZIELLEN
[5]   ELASTIC CONSTANTS OF GALENA [J].
BHAGAVANTAM, S ;
RAO, TS .
NATURE, 1951, 168 (4262) :42-42
[6]  
BLOEM J, 1956, PHILIPS RES REP, V11, P273
[7]  
BOUNTON GV, 1969, J PHYS C, V2, P116
[8]   DEVIATIONS FROM STOICHIOMETRY AND ELECTRICAL PROPERTIES IN SNTE [J].
BREBRICK, RF .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) :27-&
[9]  
BREITSAMETER B, 1978, 13 JAHR TAG VER KRIS
[10]  
BURSTEIN E, 1955, ADV ELECTRONICS ELEC, V7, P1