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INP (MIS) SCHOTTKY-BARRIER SOLAR-CELLS
被引:3
作者
:
KAMIMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
AOYAMA GAKUIN UNIV,COLL SCI & ENGN,DEPT ELEC & ELECTR ENGN,TOKYO 157,JAPAN
AOYAMA GAKUIN UNIV,COLL SCI & ENGN,DEPT ELEC & ELECTR ENGN,TOKYO 157,JAPAN
KAMIMURA, K
[
1
]
论文数:
引用数:
h-index:
机构:
SUZUKI, T
[
1
]
KUNIOKA, A
论文数:
0
引用数:
0
h-index:
0
机构:
AOYAMA GAKUIN UNIV,COLL SCI & ENGN,DEPT ELEC & ELECTR ENGN,TOKYO 157,JAPAN
AOYAMA GAKUIN UNIV,COLL SCI & ENGN,DEPT ELEC & ELECTR ENGN,TOKYO 157,JAPAN
KUNIOKA, A
[
1
]
机构
:
[1]
AOYAMA GAKUIN UNIV,COLL SCI & ENGN,DEPT ELEC & ELECTR ENGN,TOKYO 157,JAPAN
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1980年
/ 19卷
关键词
:
D O I
:
10.7567/JJAPS.19S2.203
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:203 / 206
页数:4
相关论文
共 4 条
[1]
ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
GLEASON, KR
论文数:
0
引用数:
0
h-index:
0
GLEASON, KR
DIETRICH, HB
论文数:
0
引用数:
0
h-index:
0
DIETRICH, HB
HENRY, RL
论文数:
0
引用数:
0
h-index:
0
HENRY, RL
COHEN, ED
论文数:
0
引用数:
0
h-index:
0
COHEN, ED
BARK, ML
论文数:
0
引用数:
0
h-index:
0
BARK, ML
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(09)
: 578
-
581
[2]
PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS
KAMIMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Institute of Technology, Meguro-ku, Tokyo
KAMIMURA, K
SAKAI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Institute of Technology, Meguro-ku, Tokyo
SAKAI, Y
[J].
THIN SOLID FILMS,
1979,
56
(1-2)
: 215
-
223
[3]
NEVILIE RC, 1978, SOLAR ENERGY CONVERS, P110
[4]
LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
MAJERFELD, A
论文数:
0
引用数:
0
h-index:
0
MAJERFELD, A
[J].
ELECTRONICS LETTERS,
1978,
14
(05)
: 125
-
126
←
1
→
共 4 条
[1]
ION-IMPLANTED N-CHANNEL INP METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
GLEASON, KR
论文数:
0
引用数:
0
h-index:
0
GLEASON, KR
DIETRICH, HB
论文数:
0
引用数:
0
h-index:
0
DIETRICH, HB
HENRY, RL
论文数:
0
引用数:
0
h-index:
0
HENRY, RL
COHEN, ED
论文数:
0
引用数:
0
h-index:
0
COHEN, ED
BARK, ML
论文数:
0
引用数:
0
h-index:
0
BARK, ML
[J].
APPLIED PHYSICS LETTERS,
1978,
32
(09)
: 578
-
581
[2]
PROPERTIES OF GAAS-AL2O3 AND INP-AL2O3 INTERFACES AND THE FABRICATION OF MIS FIELD-EFFECT TRANSISTORS
KAMIMURA, K
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Institute of Technology, Meguro-ku, Tokyo
KAMIMURA, K
SAKAI, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Tokyo Institute of Technology, Meguro-ku, Tokyo
SAKAI, Y
[J].
THIN SOLID FILMS,
1979,
56
(1-2)
: 215
-
223
[3]
NEVILIE RC, 1978, SOLAR ENERGY CONVERS, P110
[4]
LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP
WADA, O
论文数:
0
引用数:
0
h-index:
0
WADA, O
MAJERFELD, A
论文数:
0
引用数:
0
h-index:
0
MAJERFELD, A
[J].
ELECTRONICS LETTERS,
1978,
14
(05)
: 125
-
126
←
1
→