SINGLE-CRYSTAL SOLAR-CELL HETEROJUNCTIONS INVOLVING N-CADMIUM SULFIDE

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] ARIENZO M, 1979, THESIS BROWN U PROVI

[3] BACKMAN KJ, 1978, CURRENT TOPICS MATER

[4] Barnett A. M., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P419

[5] CDS-INP AND CDS-GAAS HETEROJUNCTIONS BY CHEMICAL-VAPOR DEPOSITION OF CDS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 865 - 870

[6] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &

[7] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +

[8] Fahrenbruch A. L., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P529

[9] Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11

[10] HOVEL HJ, 1972, P S GAAS RELATED COM, P205

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] ARIENZO M, 1979, THESIS BROWN U PROVI

[3] BACKMAN KJ, 1978, CURRENT TOPICS MATER

[4] Barnett A. M., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P419

[5] CDS-INP AND CDS-GAAS HETEROJUNCTIONS BY CHEMICAL-VAPOR DEPOSITION OF CDS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) : 865 - 870

[6] CURRENT/VOLTAGE CHARACTERISTICS OF P-N GE-SI AND GE-GAAS HETEROJUNCTIONS [J]. PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1966, 113 (09): : 1468 - &

[7] CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) : 63 - +

[8] Fahrenbruch A. L., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P529

[9] Hovel H.J., 1975, SEMICONDUCTORS SEMIM, V11

[10] HOVEL HJ, 1972, P S GAAS RELATED COM, P205