NONDESTRUCTIVE THICKNESS DETERMINATION OF POLYCRYSTALLINE SILICON DEPOSITED ON OXIDIZED SILICON

被引：19

作者：

DELLOCA, CJ

机构：

来源：

关键词：

D O I：

10.1149/1.2404113

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：108 / &

共 6 条

[1] STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF AMORPHOUS SILICON FILMS
BRODSKY, MH
TITLE, RS
WEISER, K
PETTIT, GD
[J]. PHYSICAL REVIEW B, 1970, 1 (06): : 2632 - &
[2] NON-DESTRUCTIVE MEASUREMENT OF GLASS ON SILICON DIOXIDE THROUGH NEAR-INFRARED (NIR) INTERFERENCE
CORL, EA
KOSANKE, K
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (10) : 943 - &
[3] FRANZ I, 1969, SOLID STATE ELECTRON, V13, P807
[4] Heavens OS, 1955, OPTICAL PROPERTIES T, P63
[5] REIZMANN T, 1967, SOLID STATE ELECTRON, V10, P625
[6] SALSBERG CD, 1957, J OPT SOC AM, V47, P244