GROWTH AND CHARACTERIZATION OF GAN ON SAPPHIRE (0001) USING PLASMA-ASSISTED IONIZED SOURCE BEAM EPITAXY

被引:7
作者
KIM, K
YOO, MC
SHIM, KH
VERDEYEN, JT
机构
[1] Univ of Illinois at Urbana-Champaign, Urbana
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期
关键词
D O I
10.1116/1.587891
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel approach to epitaxial GaN growth using the plasma-assisted ionized source beam epitaxy (PAISBE) was reported. To assist the growth of GaN, an accelerated partially ionized Ga source beam was employed along with an atomic nitrogen beam from an rf-discharge nitrogen plasma. The crystal property and surface morphology of the PAISBE-grown GaN films on sapphire (0001) were investigated using reflection high-energy electron diffraction, X-ray diffraction, and scanning electron microscopy. The optimum films were achieved with a partially ionized Ga beam at peak for a 0.4-μm-thick film. The buffer layer was a GaN film grown at 400°C. Observations showing the effects of different control parameters and, particularly, those exhibiting the advantages of PAISBE were reported.
引用
收藏
页码:796 / 799
页数:4
相关论文
共 7 条
  • [1] GROWTH OF GAAS ON SI USING IONIZED CLUSTER BEAM TECHNIQUE
    KIM, K
    SUNG, MY
    HSIEH, KC
    COWELL, EW
    FENG, MS
    CHENG, KY
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 792 - 795
  • [2] A COMPARATIVE-STUDY OF GAN EPILAYERS GROWN ON SAPPHIRE AND SIC SUBSTRATES BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY
    LIN, ME
    SVERDLOV, B
    ZHOU, GL
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1993, 62 (26) : 3479 - 3481
  • [3] MORKOC H, 1994, APPL PHYS, V76, P1363
  • [4] INSITU MONITORING AND HALL MEASUREMENTS OF GAN GROWN WITH GAN BUFFER LAYERS
    NAKAMURA, S
    MUKAI, T
    SENOH, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) : 5543 - 5549
  • [5] STRUCTURAL-ANALYSIS OF EPITAXIAL GAAS ON ON-AXIS (100) SI GROWN BY IONIZED SOURCE BEAM EPITAXY
    YOO, MC
    YUN, SJ
    KIM, K
    RIGSBEE, JM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (05): : 1942 - 1948
  • [6] EFFECT OF IONIZATION AND ACCELERATION OF AS-SOURCE BEAM ON LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON EXACT (100)SI
    YUN, SJ
    KIM, K
    YOO, MC
    [J]. APPLIED SURFACE SCIENCE, 1993, 70-1 (1 -4 pt B) : 536 - 541
  • [7] LOW-TEMPERATURE EPITAXIAL-GROWTH OF GAAS ON ON-AXIS (100) SI USING IONIZED SOURCE BEAM EPITAXY
    YUN, SJ
    YOO, MC
    KIM, K
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2866 - 2869