GROWTH OF GAAS ON SI USING IONIZED CLUSTER BEAM TECHNIQUE

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] CHO AY, 1983, THIN SOLID FILMS, V100, P191

[3] DUPUIS RD, 1987, PROCESSING ELECTRONI

[4] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[5] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[6] NELSON H, 1963, RCA REV, V24, P603

[7] A TECHNIQUE FOR PREPARATION OF LOW-THRESHOLD ROOM-TEMPERATURE GAAS LASER DIODE STRUCTURES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) : 210 - &

[8] MOLECULAR-BEAM EPITAXY [J]. SCIENCE, 1980, 208 (4446) : 916 - 922

[9] PLOOG K, 1984, MOL BEAM EPITAXY 3 5

[10] STRINGFELLOW GB, 1979, LPE 3 5 SEMICONDUCTO

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] CHO AY, 1983, THIN SOLID FILMS, V100, P191

[3] DUPUIS RD, 1987, PROCESSING ELECTRONI

[4] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 178 - &

[5] USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .I. EPITAXIAL GALLIUM-V COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (12) : 1725 - +

[6] NELSON H, 1963, RCA REV, V24, P603

[7] A TECHNIQUE FOR PREPARATION OF LOW-THRESHOLD ROOM-TEMPERATURE GAAS LASER DIODE STRUCTURES [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1969, QE 5 (04) : 210 - &

[8] MOLECULAR-BEAM EPITAXY [J]. SCIENCE, 1980, 208 (4446) : 916 - 922

[9] PLOOG K, 1984, MOL BEAM EPITAXY 3 5

[10] STRINGFELLOW GB, 1979, LPE 3 5 SEMICONDUCTO