A TECHNIQUE FOR PREPARATION OF LOW-THRESHOLD ROOM-TEMPERATURE GAAS LASER DIODE STRUCTURES

被引：44

作者：

PANISH, MB

HAYASHI, I

SUMSKI, S

机构：

[1] Bell Telephone Labs., Inc., Murray Hill, N.J.

来源：

关键词：

D O I：

10.1109/JQE.1969.1075757

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：210 / &

共 7 条

[1] GIESECKE G, 1966, SEMICONDUCT SEMIMET, V2, P73
[2] HAYASHI I, IN PRESS
[3] HAYASHI I, 1969, IEEE J QUANTUM ELECT, VQE 5, P211
[4] NELSON H, 1963, RCA REV, V24, P603
[5] SOLID SOLUBILITY LIMITS OF ZINC IN GAAS AT 1000 DEGREES
PANISH, MB
CASEY, HC
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (09) : 1673 - +
[6] GA-AL-AS - PHASE THERMODYNAMIC AND OPTICAL PROPERTIES
PANISH, MB
SUMSKI, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (01) : 129 - &
[7] WILLARDSON RK, 1966, SEMICONDUCTORS SE ED, V2, P73