SILICON BICRYSTAL GROWTH

被引：4

作者：

LU, YC ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

关键词：

D O I：

10.1016/0022-0248(86)90456-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：322 / 325

页数：4

共 6 条

[1] AUBERT JJ, 1980, 3RD EC PHOT SOL EN C, P589
[2] SILICON SHEET BICRYSTAL GROWTH FOR THE STUDY OF GRAIN-BOUNDARY EFFECTS IN SOLAR-CELLS
CISZEK, TF
HOGAN, SJ
HURD, JL
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) : 335 - 345
[3] GROWTH OF SILICON BICRYSTALS BY THE DASH PEDESTAL-METHOD
GERETH, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (11) : 1068 - 1070
[4] ORIENTED GROWTH AND DEFINITION OF MEDIUM ANGLE SEMICONDUCTOR BICRYSTALS
MATARE, HF
WEGENER, HAR
[J]. ZEITSCHRIFT FUR PHYSIK, 1957, 148 (05): : 631 - 645
[5] QUEISSER HJ, 1963, FESTKORPERPROBLEME, V2, P162
[6] STUTZLER FJ, 1985, 4TH P JAP I MET INT