SELECTIVE DEPOSITION OF SILICON-OXIDE USING A PLASMA-FLUORINATED RESIST MASK

被引：9

作者：

AWAYA, N

ARITA, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 07期

关键词：

D O I：

10.1143/JJAP.27.1172

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1172 / 1175

页数：4

共 7 条

[1]

AWAYA N, 1986, JPN J APPL PHYS PT 2, V25, P24

[2]

GARGINI PA, 1981, INT ELECTRON DEVICE

[3]

KASAI H, 1985, HYOMEN KAGAKU, V6, P30

[4]

MILLER NE, 1982, SOLID STATE TECHNOL, V25, P85

[5]

SATOKAWA T, 1982, KINOUSEI GAN FUSSO K, P35

[6] SELECTIVE DEPOSITION OF SIO2 THIN-FILMS IN ACID BATHS [J].

SMITH, MA ;

LEVENSON, LL .

[7] SELECTIVE SILICON EPITAXY USING REDUCED PRESSURE TECHNIQUE [J].

TANNO, K ;

ENDO, N ;

KITAJIMA, H ;

KUROGI, Y ;

TSUYA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L564-L566