FAR INFRARED FREE-CARRIER ABSORPTION IN N-TYPE GALLIUM ARSENIDE

[1] DONOR SPECTROSCOPY IN GAAS [J]. PHYSICS LETTERS A, 1968, A 28 (05) : 320 - +

[2] QUANTUM THEORY OF FREE CARRIER ABSORPTION [J]. PHYSICAL REVIEW, 1961, 124 (06): : 1813 - &

[3] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[4] CONDUCTION BANDS IN 6H AND 15R SILICON CARBIDE .2. ABSORPTION MEASUREMENTS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1967, 299 (1458): : 393 - &

[5] CONVERGENCE CORRECTIONS FOR ABSORPTION MEASUREMENTS IN FAR INFRA-RED [J]. INFRARED PHYSICS, 1970, 10 (01): : 57 - &

[6] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) : 658 - &

[7] FREE-CARRIER INFRARED ABSORPTION AND DETERMINATION OF DEFORMATION-POTENTIAL CONSTANT IN N-TYPE INSB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (06) : 777 - &

[8] INFRARED LATTICE REFLECTION SPECTRA OF III-V COMPOUND SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1099 - +

[9] IWASA S, 1964, 1964 P INT C PHYS SE, P1077

[10] FAR INFRARED MEASUREMENT OF DIELECTRIC PROPERTIES OF GAAS AND CDTE AT 300-K AND 8-K [J]. APPLIED OPTICS, 1969, 8 (08) : 1667 - +

[1] DONOR SPECTROSCOPY IN GAAS [J]. PHYSICS LETTERS A, 1968, A 28 (05) : 320 - +

[2] QUANTUM THEORY OF FREE CARRIER ABSORPTION [J]. PHYSICAL REVIEW, 1961, 124 (06): : 1813 - &

[3] BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J]. PHYSICAL REVIEW, 1960, 120 (06): : 1951 - 1963

[4] CONDUCTION BANDS IN 6H AND 15R SILICON CARBIDE .2. ABSORPTION MEASUREMENTS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1967, 299 (1458): : 393 - &

[5] CONVERGENCE CORRECTIONS FOR ABSORPTION MEASUREMENTS IN FAR INFRA-RED [J]. INFRARED PHYSICS, 1970, 10 (01): : 57 - &

[6] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) : 658 - &

[7] FREE-CARRIER INFRARED ABSORPTION AND DETERMINATION OF DEFORMATION-POTENTIAL CONSTANT IN N-TYPE INSB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (06) : 777 - &

[8] INFRARED LATTICE REFLECTION SPECTRA OF III-V COMPOUND SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (AUG) : 1099 - +

[9] IWASA S, 1964, 1964 P INT C PHYS SE, P1077

[10] FAR INFRARED MEASUREMENT OF DIELECTRIC PROPERTIES OF GAAS AND CDTE AT 300-K AND 8-K [J]. APPLIED OPTICS, 1969, 8 (08) : 1667 - +