THE EPITAXIAL-GROWTH OF CDXHG1-XTE FROM STOICHIOMETRIC MELTS - CRYSTALLIZATION AND DIFFUSION

被引：18

作者：

IVANOVOMSKII, VI

MIRONOV, KE

OGORODNIKOV, VK

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 02期

关键词：

Compendex;

D O I：

10.1002/pssa.2210580227

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CRYSTALS

引用

页码：543 / 548

页数：6

共 11 条

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OGORODNIKOV, VK
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (01): : 43 - 48
[5] BACKSIDE-ILLUMINATED HGCDTE-CDTE PHOTO-DIODES
LANIR, M
WANG, CC
VANDERWYCK, AHB
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 50 - 52
[6] PASHKOVSKII MV, 1974, ZARUBEZH ELEKTRON TE, V84, P3
[7] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF GRADED-GAP EPITAXIAL CDXHG1-XTE LAYERS
PAWLIKOWSKI, JM
[J]. THIN SOLID FILMS, 1977, 44 (03) : 241 - 276
[8] Pfann W.G., 1966, ZONE MELTING
[9] PHASE DIAGRAM OF ALLOY SYSTEM HGTE-CDTE
RAY, B
SPENCER, PM
[J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 371 - &
[10] RODOT H, 1964, CR HEBD ACAD SCI, V258, P6386