TRANSIENT SPACE-CHARGE PHENOMENA IN SEMICONDUCTORS AT HIGH ELECTRIC-FIELDS

被引：3

作者：

DALAL, VL ^{[1
]}

LAMPERT, MA ^{[1
]}

机构：

[1] PRINCETON UNIV,PRINCETON,NJ 08540

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 06期

关键词：

D O I：

10.1016/0038-1101(73)90112-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：689 / 699

页数：11

共 16 条

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[9] TRANSIENT BEHAVIOR OF SPACE-CHARGE-LIMITED CURRENTS IN P-TYPE SILICON [J].

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[10] TRANSIENT SPACE-CHARGE-LIMITED CURRENTS IN IODINE SINGLE CRYSTALS ALONG VARIOUS CRYSTALLOGRAPHIC DIRECTIONS [J].

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