HIGH ELECTRIC-FIELD EFFECTS IN N-SILICON

被引：5

作者：

DALAL, VL

LAMPERT, MA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 11期

关键词：

D O I：

10.1063/1.1660972

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4600 / +

页数：1

共 12 条

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[8]

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[9] MEASUREMENT OF HIGH-FIELD CARRIER DRIFT VELOCITIES IN SILICON BY A TIME-OF-FLIGHT TECHNIQUE [J].

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