HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY OF SILICON-ON-INSULATOR FORMED BY HIGH-DOSE OXYGEN IMPLANTATION

被引：11

作者：

CHANG, PH ^{[1
]}

MAO, BY ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 03期

关键词：

D O I：

10.1063/1.97645

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：152 / 154

页数：3

共 8 条

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[3]

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[4] MICROSTRUCTURE OF HIGH-TEMPERATURE ANNEALED BURIED OXIDE SILICON-ON-INSULATOR [J].

MAO, BY ;

CHANG, PH ;

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KEENAN, JA .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :794-796

[5] SIO2 BURIED LAYER FORMATION BY SUBCRITICAL DOSE OXYGEN ION-IMPLANTATION [J].

STOEMENOS, J ;

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APPLIED PHYSICS LETTERS, 1986, 48 (21) :1470-1472

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VEDULA KM, 1970, METALL TRANS, V1, P9

[7] ON THE OSTWALD RIPENING THEORY [J].

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[8]

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