SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS

被引：23

作者：

HEMMENT, PLF

PEART, RF

YAO, MF

STEPHENS, KG

ARROWSMITH, RP

CHATER, RJ

KILNER, JA

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1985年 / 6卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(85)90648-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：292 / 297

页数：6

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HEMMENT, PLF ;

MAYDELLONDRUSZ, E ;

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